Valence-bond dynamical mean-field theory of doped Mott insulators: Pseudogap and Fermi arcs formation as an orbital-selective Mott transition
M. Ferrero
Mon, Mar. 16th 2009, 14:15
Salle Claude Itzykson, Bât. 774, Orme des Merisiers
In this talk, I will introduce a valence-bond dynamical mean-field theory of doped Mott insulators. It is based on a minimal cluster of two orbitals, each associated with a different region of momentum space and hybridized to a self-consistent bath. The low-doping regime is characterized by singlet formation and the suppression of quasiparticles in the antinodal regions, leading to the formation of Fermi arcs. I will show that this is described by an orbital-selective transition in momentum space. I will also present calculations for the tunneling and photoemission spectra that are consistent with the phenomenology of the normal state of cuprate superconductors.
Contact : Olivier PARCOLLET


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